IRF540NL
Infineon Technologies
MOSFET N-CH 100V 33A TO262
OBSOLETE
RoHS: RoHS non-compliant
Tube
| Distributor | SKU | Bestand | Min. | Verpackung | Lieferzeit | 1 | 10 | 100 | 1.000 | 10.000 | Stand | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Digi-Key | IRF540NL-ND | 0 | – | Tube | – | – | – | – | – | – | 1d | Zum Angebot → |
Preise pro Stück in EUR, netto zzgl. USt. * Preis von niedrigerer Staffelmenge abgeleitet, keine exakte Staffel für diese Menge hinterlegt.
Technische Spezifikationen
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 100 V
- Current - Continuous Drain (Id) @ 25°C
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 44mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 71 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 1960 pF @ 25 V
- Power Dissipation (Max)
- 130W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-262
- Package / Case
- TO-262-3 Long Leads, I2PAK, TO-262AA
Technische Details
- Gehäuse
- Tube
- Datenblatt
- Öffnen →